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1N3671A

Description
12 A, 960 V, SILICON, RECTIFIER DIODE, DO-4
CategoryDiscrete semiconductor    diode   
File Size104KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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1N3671A Overview

12 A, 960 V, SILICON, RECTIFIER DIODE, DO-4

1N3671A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current240 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
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