2N6703 datasheet, PDF - EEWORLD Datasheet

2N6703: Description7A, 110V, NPN, Si, POWER TRANSISTOR, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size230KB，6 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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2N6703 Overview

7A, 110V, NPN, Si, POWER TRANSISTOR, TO-220AB

Parameter Name	Attribute value
Objectid	1407133149
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	7 A
Collector-based maximum capacity	150 pF
Collector-emitter maximum voltage	110 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	50 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	350 ns
VCEsat-Max	1.5 V

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