The AG603-89 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT technology process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG603-89 will work for other various applications
within the DC to 3 GHz frequency range such as CATV
and fixed wireless.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output IP3
(2)
Output IP2
Output P1dB
Noise Figure
Test Frequency
Gain
Output IP3
(2)
Output P1dB
Device Voltage
Device Current
Typical Performance
(1)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
Typ
900
18.5
18
14
+33.2
+45
+19.3
3.9
1900
16.5
+33.0
+18.7
5.16
75
Max
3000
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(2)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
19.1
-16
-18
+19.3
+33.6
3.8
Typical
900
18.5
-18
-14
+19.3
+33.2
3.9
1900
16.5
-24
-11
+18.7
+33.0
4.1
2140
16.0
-21
-11
+18.6
+33.0
4.1
15.5
17.5
1. Test conditions: 25º C, Supply Voltage = +6 V, R
bias
= 11.2
Ω,
50
Ω
System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85
°C
-55 to +150
°C
+7 V
+10 dBm
+250° C
Ordering Information
Part No.
AG603-89*
AG603-89G
AG603-89PCB
Description
InGaP HBT Gain Block
(lead-tin SOT-89 Pkg)
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
700 – 2400 MHz Fully Assembled Eval. Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice
Page 1 of 6
June 2005
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
AG603-89
InGaP HBT Gain Block
Product Information
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 11.2
Ω
, I
cc
= 75 mA
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
19.4
-18
-29
+19.3
+33.7
3.8
500
19.1
-16
-18
+19.3
+33.6
3.8
900
18.5
-18
-14
+19.3
+33.2
3.9
1900
16.5
-24
-11
+18.7
+33.0
4.1
2140
16.0
-21
-11
+18.6
+33.0
4.1
2400
15.5
-22
-10
+18.6
+32.8
4.2
3500
13.5
-17
-8
+17.0
5800
9.7
-14
-6
1. Test conditions: T = 25ºC, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2
Ω,
Icc = 75 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
20
18
Return Loss
0
Device Current (mA)
I-V Curve
120
100
80
60
40
20
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
Optimal operating point
16
14
12
10
0
-40 C
1
+25 C
+85 C
3
4
S11, S22 (dB)
-10
-20
-30
S11
S22
Gain (dB)
-40
2
Frequency (GHz)
0
1
2
3
4
5
6
Frequency (GHz)
Output IP2 vs. Frequency
Device Voltage (V)
Noise Figure vs. Frequency
Output IP3 vs. Frequency
40
35
30
25
-40 C
+25 C
+85 C
50
45
40
35
-40 C
+25 C
+85 C
6
5
NF (dB)
4
3
2
-40 C
+25 C
+85 C
OIP3 (dBm)
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
OIP2 (dBm)
30
1
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
Frequency (MHz)
Output Power / Gain vs. Input Power
20
18
Gain (dB)
frequency = 900 MHz
Frequency (GHz)
Output Power / Gain vs. Input Power
24
Output Power (dBm)
frequency = 2000 MHz
20
15
10
5
-40 C
+25 C
+85 C
18
16
Gain (dB)
24
Output Power (dBm)
P1dB (dBm)
Gain
20
16
12
Output Power
8
4
20
Gain
16
12
8
Output Power
4
-12
-8
-4
0
Input Power (dBm)
4
8
16
14
12
14
12
10
8
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
10
-12
-8
-4
0
Input Power (dBm)
4
8
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 6
June 2005
AG603-89
InGaP HBT Gain Block
Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +8 V, R
bias
= 38
Ω
, I
cc
= 75 mA
Gain vs. Frequency
20
18
16
14
12
10
0
-40 C
1
+25 C
+85 C
3
4
Output IP3 vs. Frequency
Output IP2 vs. Frequency
40
35
30
25
-40 C
+25 C
+85 C
50
45
40
35
-40 C
+25 C
+85 C
OIP3 (dBm)
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
OIP2 (dBm)
Gain (dB)
30
2
Frequency (GHz)
0
200
400
600
800
1000
Frequency (MHz)
Noise Figure vs. Frequency
20
15
10
5
-40 C
+25 C
+85 C
6
5
NF (dB)
4
3
2
-40 C
+25 C
+85 C
P1dB (dBm)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
1
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Vcc
Icc = 75 mA
Application Circuit
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
AG603-89
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Ref. Desig.
L1
C1, C2
C3
C4
R1
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
Size
0603
0603
0603
0805
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
µF
chip capacitor
Do Not Place
10.0
Ω
1% tolerance
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
6V
11.2 ohms
0805
7V
24.5 ohms
1210
8V
38 ohms
1210
9V
51 ohms
2010
10 V
65 ohms
2010
12 V
91 ohms
2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 6
June 2005
AG603-89
InGaP HBT Gain Block
Product Information
AG603-89 (SOT-89 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The AG603-89 will be marked with
“AG603” designator. An alphanumeric
code (“XXXX-X”) is also marked below
part designator on the top surface of
package.
an
lot
the
the
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at 1000 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes at 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Land Pattern
MSL Rating: Level 3 at +235° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth
(1)
Junction Temperature, Tjc
(2)
-40 to +85°C
154° C/W
145° C
MTTF (million hrs)
Rating
1000
MTTF vs. GND Tab Temperature
100
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+5.16V, 75 mA at an 85°C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177
°C.
10
1
60
70
80
90
100 110
Tab Temperature (°C)
120
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 6
June 2005
AG603-89
InGaP HBT Gain Block
Product Information
AG603-89G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded
(maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The AG603-89G will be marked with
“A603G” designator. An alphanumeric
code (“XXXX-X”) is also marked below
part designator on the top surface of
package.
an
lot
the
the
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes at 1000 V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes at 1000 V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated
thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth
(1)
Junction Temperature, Tjc
(2)
-40 to +85°C
154° C/W
145° C
MTTF (million hrs)
Rating
1000
MTTF vs. GND Tab Temperature
100
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
+5.16V, 75 mA at an 85°C case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177
°C.
10
1
60
70
80
90
100 110
Tab Temperature (°C)
120
Specifications and information are subject to change without notice
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