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BC212_D26Z

Description
transistor pnp 50v 300ma TO-92
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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BC212_D26Z Overview

transistor pnp 50v 300ma TO-92

BC212_D26Z Parametric

Parameter NameAttribute value
Datasheets
BC212
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypePNP
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2mA, 5V
Power - Max625mW
Frequency - Transiti-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
BC212 — PNP General Purpose Amplifier
September 2007
BC212
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
Value
60
50
5
300
-55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Test Condition
I
C
= 10μA
I
C
= 2mA
I
E
= 10μA
V
EB
= 4V
V
CB
= 30V
V
CE
= 5V, I
C
= 10μA
V
CE
= 5V, I
C
= 2mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
Min.
60
50
5
Typ.
Max.
Units
V
V
V
15
15
40
60
0.6
1.4
0.6
0.72
6
nA
nA
V
V
V
pF
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
© 2007 Fairchild Semiconductor Corporation
BC212 Rev. 1.0.0
1
www.fairchildsemi.com

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Standard Package 2,000 2,000 2,000 - -
Category Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products - -
Family Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single - -
Packaging Tape & Reel (TR) Bulk Tape & Box (TB) - -
Transistor Type PNP PNP PNP - -
Current - Collector (Ic) (Max) 300mA 300mA 300mA - -
Voltage - Collector Emitter Breakdown (Max) 50V 50V 50V - -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA - -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 5V 60 @ 2mA, 5V 60 @ 2mA, 5V - -
Power - Max 625mW 625mW 625mW - -
Mounting Type Through Hole Through Hole Through Hole - -
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads - -
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 - -

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