BC212 — PNP General Purpose Amplifier
September 2007
BC212
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
Value
60
50
5
300
-55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Test Condition
I
C
= 10μA
I
C
= 2mA
I
E
= 10μA
V
EB
= 4V
V
CB
= 30V
V
CE
= 5V, I
C
= 10μA
V
CE
= 5V, I
C
= 2mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
Min.
60
50
5
Typ.
Max.
Units
V
V
V
15
15
40
60
0.6
1.4
0.6
0.72
6
nA
nA
V
V
V
pF
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
© 2007 Fairchild Semiconductor Corporation
BC212 Rev. 1.0.0
1
www.fairchildsemi.com
BC212
BC212 PNP General Purpose Amplifier
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
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which, (a) are intended for surgical implant into the body, or
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when properly used in accordance with instructions for use
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
© 2007 Fairchild Semiconductor Corporation
BC212 Rev. 1.0.0
2
www.fairchildsemi.com