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934064234118

Description
120A, 40V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size366KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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934064234118 Overview

120A, 40V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

934064234118 Parametric

Parameter NameAttribute value
Objectid8074800510
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)637 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0038 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)914 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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