DDR DRAM, 1GX4, 0.4ns, CMOS, PBGA78,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Objectid | 114801168 |
| package instruction | FBGA, BGA78,9X13,32 |
| Reach Compliance Code | compliant |
| Country Of Origin | Mainland China |
| ECCN code | EAR99 |
| YTEOL | 2 |
| Maximum access time | 0.4 ns |
| Maximum clock frequency (fCLK) | 400 MHz |
| I/O type | COMMON |
| interleaved burst length | 8 |
| JESD-30 code | R-PBGA-B78 |
| memory density | 4294967296 bit |
| Memory IC Type | DDR3 DRAM |
| memory width | 4 |
| Number of terminals | 78 |
| word count | 1073741824 words |
| character code | 1000000000 |
| Maximum operating temperature | 105 °C |
| Minimum operating temperature | -40 °C |
| organize | 1GX4 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | FBGA |
| Encapsulate equivalent code | BGA78,9X13,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH |
| power supply | 1.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Continuous burst length | 8 |
| Maximum standby current | 0.01 A |
| Maximum slew rate | 0.135 mA |
| Nominal supply voltage (Vsup) | 1.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
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