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FJNS3208RBU

Description
trans prebias npn 300mw to92s
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FJNS3208RBU Overview

trans prebias npn 300mw to92s

FJNS3208RBU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92S
package instructionTO-92S, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

FJNS3208RBU Related Products

FJNS3208RBU FJNS3208RTA
Description trans prebias npn 300mw to92s trans prebias npn 300mw to92s
Is it Rohs certified? conform to conform to
Maker Fairchild Fairchild
Parts packaging code TO-92S TO-92S
package instruction TO-92S, 3 PIN TO-92S, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 0.47 BUILT IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 56 56
JESD-30 code R-PSIP-T3 R-PSIP-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz

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