K4S28323LE-FE1H datasheet, PDF

K4S28323LE-FE1H: DescriptionSynchronous DRAM, 4MX32, 7ns, CMOS, PBGA90; Categorystorage storage; File Size81KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S28323LE-FE1H Overview

Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	104351766
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	2
Maximum access time	7 ns
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e0
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of terminals	90
word count	4194304 words
character code	4000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0005 A
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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