EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

V55C2256164VAC10

Description
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
Categorystorage    storage   
File Size614KB,46 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V55C2256164VAC10 Overview

Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54

V55C2256164VAC10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1155475791
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
YTEOL2
Maximum access time7 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeS-PBGA-B54
JESD-609 codee0
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of terminals54
word count16777216 words
character code16000000
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA54,9X9,32
Package shapeSQUARE
Package formGRID ARRAY, FINE PITCH
power supply1.8,2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length1,2,4,8,FP
Maximum standby current0.00001 A
Maximum slew rate0.19 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号