Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Objectid | 1155475791 |
Reach Compliance Code | compliant |
Country Of Origin | Mainland China |
ECCN code | EAR99 |
YTEOL | 2 |
Maximum access time | 7 ns |
Maximum clock frequency (fCLK) | 100 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | S-PBGA-B54 |
JESD-609 code | e0 |
memory density | 268435456 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 16 |
Number of terminals | 54 |
word count | 16777216 words |
character code | 16000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | FBGA |
Encapsulate equivalent code | BGA54,9X9,32 |
Package shape | SQUARE |
Package form | GRID ARRAY, FINE PITCH |
power supply | 1.8,2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.00001 A |
Maximum slew rate | 0.19 mA |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | TIN LEAD |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |