Freescale Semiconductor
Technical Data
Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF6S9125
Rev. 2, 2/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
N - CDMA Application
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
950 mA, P
out
= 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 47.1 dBc @ 30 kHz Bandwidth
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 60 Watts Avg., Full Frequency Band (865 - 895 MHz or
921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40% (Typ)
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 700 mA, P
out
=
125 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,
@ f = 880 MHz
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
MRF6S9125MR1
MRF6S9125MBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125MR1
CASE 1484 - 03, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125MBR1
Value
- 0.5, +68
- 0.5, +12
398
2.3
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S9125MR1 MRF6S9125MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
Symbol
R
θJC
Value
(1)
0.44
0.45
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
3
Package Peak Temperature
260
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
°C
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 950 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.74 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 8 Adc)
Dynamic Characteristics
(2)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
C
oss
C
rss
—
—
60
2
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
0.05
—
2.1
2.89
0.23
6
3
4
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 27 W, f = 880 MHz
G
ps
η
D
ACPR
IRL
19
29
—
—
20.2
31
- 47.1
- 16
24
—
- 45
-9
dB
%
dBc
dB
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Part is internally input matched.
(continued)
MRF6S9125MR1 MRF6S9125MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ
= 950 mA,
P
out
= 60 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
40
1.5
- 63
- 78
—
—
—
—
—
dB
%
% rms
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, I
DQ
= 700 mA, P
out
= 125 W,
921 MHz<Frequency<960 MHz
Power Gain
G
ps
η
D
IRL
P1dB
—
—
—
—
19
62
- 12
125
—
—
—
—
dB
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 880 MHz)
%
dB
W
ARCHIVE INFORMATION
MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
R1
V
BIAS
+
C10
RF
INPUT
C9
+
C8
+
C7
R2
C6
L1
Z1
C1
C2
C3
C5
Z2
Z3
Z4
Z5
Z6
Z7
C4
Z8
C11
DUT
C12
C13
C14
Z9
Z10
L2
Z11
Z12
Z13
Z14
C18
C19
+
C20
+
C21
+
C22
V
SUPPLY
C23
Z15
Z16
RF
OUTPUT
Z17
C17
C15
C16
ARCHIVE INFORMATION
Figure 1. MRF6S9125MR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9125MR1(MBR1) Test Circuit Component Designations and Values
Part
C1
C2
C3, C15
C4, C5
C6, C18, C19
C7, C8
C9, C23
C10
C11, C12
C13, C14
C16
C17
C20, C21
C22
L1
L2
R1
R2
Description
20 pF Chip Capacitor
6.2 pF Chip Capacitor
0.8- 8.0 pF Variable Capacitors, Gigatrim
11 pF Chip Capacitors
0.56
µF,
50 V Chip Capacitors
47
µF,
16 V Tantalum Capacitors
47 pF Chip Capacitors
100
µF,
50 V Electrolytic Capacitor
12 pF Chip Capacitors
5.1 pF Chip Capacitors
0.3 pF Chip Capacitor
39 pF Chip Capacitor
22
µF,
35 V Tantalum Capacitors
470
µF,
63 V Electrolytic Capacitor
7.15 nH Inductor
8.0 nH Inductor
15
Ω,
1/4 W Chip Resistor (1210)
560 kΩ,
1/8
W Resistor (1206)
Part Number
600B200FT250XT
600B6R2BT250XT
27291SL
600B110FT250XT
C1825C564J5RAC
593D476X9016D2T
700B470FW500XT
515D107M050BB6A
600B120FT250XT
600B5R1BT250XT
700B0R3BW500XT
700B390FW500XT
T491X226K035AS
SME63V471M12X25LL
1606- 7J
A03T
ATC
ATC
Johanson
ATC
Kemet
Vishay
ATC
Vishay
ATC
ATC
ATC
ATC
Kemet
United Chemi - Con
CoilCraft
CoilCraft
Dale/Vishay
Dale/Vishay
Manufacturer
MRF6S9125MR1 MRF6S9125MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200″ x 0.080″ Microstrip
1.060″ x 0.080″ Microstrip
0.382″ x 0.220″ Microstrip
0.108″ x 0.220″ Microstrip
0.200″ x 0.420″ x 0.620″ Taper
0.028″ x 0.620″ Microstrip
0.236″ x 0.620″ Microstrip
0.050″ x 0.620″ Microstrip
0.238″ x 0.620″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″,
ε
r
= 2.55
C8 C7
C9
V
GG
C10
C1
CUT OUT AREA
L1
C2
C5
C3
C6
C19
C20 C21
C22
R2
R1
V
DD
C18
C14
L2
C23
C17
C4
C11
C13
C12
C15
C16
900 MHz
TO272 WB
Rev. 0
ARCHIVE INFORMATION
Figure 2. MRF6S9125MR1(MBR1) Test Circuit Component Layout
MRF6S9125MR1 MRF6S9125MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
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