IDT71V3579SA80BQGI datasheet, PDF

IDT71V3579SA80BQGI: Description128K X 36 CACHE SRAM, 7.5 ns, PQFP100; Categorystorage; File Size292KB，22 Pages; ManufacturerIDT (Integrated Device Technology, Inc.); Websitehttp://www.idt.com/

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IDT71V3579SA80BQGI Overview

128K X 36 CACHE SRAM, 7.5 ns, PQFP100

Parameter Name	Attribute value
Number of functions	1
Number of terminals	100
Minimum operating temperature	0.0 Cel
Maximum operating temperature	70 Cel
Rated supply voltage	3.3 V
Minimum supply/operating voltage	3.14 V
Maximum supply/operating voltage	3.46 V
Processing package description	14 X 20 MM, PLASTIC, TQFP-100
each_compli	Yes
EU RoHS regulations	Yes
state	Active
ccess_time_max	7.5 ns
jesd_30_code	R-PQFP-G100
jesd_609_code	e3
storage density	4.72E6 bi
Memory IC type	CACHE SRAM
memory width	36
moisture_sensitivity_level	3
Number of digits	131072 words
Number of digits	128K
operating mode	SYNCHRONOUS
organize	128KX36
Packaging Materials	PLASTIC/EPOXY
ckage_code	LQFP
packaging shape	RECTANGULAR
Package Size	FLATPACK, LOW PROFILE
serial parallel	PARALLEL
eak_reflow_temperature__cel_	260
qualification_status	COMMERCIAL
seated_height_max	1.6 mm
surface mount	YES
Craftsmanship	CMOS
Temperature level	COMMERCIAL
terminal coating	MATTE TIN
Terminal form	GULL WING
Terminal spacing	0.6500 mm
Terminal location	QUAD
ime_peak_reflow_temperature_max__s_	30
length	20 mm
width	14 mm
dditional_feature	FLOW-THROUGH ARCHITECTURE

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