N channel dual gate mos type (TV tuner, uhf RF amplifier applications)
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
package instruction | SMALL OUTLINE, R-PDSO-G4 |
Contacts | 4 |
Reach Compliance Code | unknow |
Other features | LOW NOISE |
Shell connection | SOURCE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 13.5 V |
Maximum drain current (Abs) (ID) | 0.03 A |
Maximum drain current (ID) | 0.03 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 0.03 pF |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JESD-30 code | R-PDSO-G4 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 4 |
Operating mode | DUAL GATE, DEPLETION MODE |
Maximum operating temperature | 125 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 240 |
Polarity/channel type | N-CHANNEL |
Minimum power gain (Gp) | 18 dB |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | GULL WING |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Base Number Matches | 1 |