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BUK573-100A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size321KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUK573-100A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUK573-100A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101427461
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)8.3 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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