CFY35/20E6327 datasheet, PDF - EEWORLD Datasheet

CFY35/20E6327: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, Junction FET, MW-4, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size112KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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CFY35/20E6327 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, Junction FET, MW-4, 4 PIN

Parameter Name	Attribute value
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
Maximum drain current (ID)	0.06 A
FET technology	JUNCTION
highest frequency band	X BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Minimum power gain (Gp)	8 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

	CFY35/20E6327	CFY35/23E6327
Description	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, Junction FET, MW-4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, Junction FET, MW-4, 4 PIN
Maker	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	5 V	5 V
Maximum drain current (ID)	0.06 A	0.06 A
FET technology	JUNCTION	JUNCTION
highest frequency band	X BAND	X BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL
Minimum power gain (Gp)	8 dB	8 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1

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