SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
250mΩ at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL
FMMT549 - 549
FMMT549A - 59A
FMMT549
FMMT549A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation:
at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
I
CBO
I
EBO
Saturation Voltages
FMMT549A
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-35
-30
-5
-2
-1
-200
500
-55 to +150
UNIT
V
V
V
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MIN.
-35
-30
-5
-0.1
-10
-0.1
-0.25
-0.50
-0.9
-0.85
70
80
40
100
150
f
T
C
obo
t
on
50
100
25
200
130
80
160
200
300
500
MHz
pF
ns
-0.50
-0.75
-0.30
V
BE(sat)
Base Emitter Turn-on Voltage V
BE(on)
Static Forward Current
Transfer Ratio
FMMT549
FMMT549A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-100mA, I
B
=-1mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
µ
A
µ
A
µ
A
V
CE(sat)
V
V
V
V
V
-1.25
-1
h
FE
Transition Frequency
Output Capacitance
Switching Times
t
off
300
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 127
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