BC556/557/558/559/560
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, V
CEO
= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
Test Condition
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
=2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA, f=10MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -200µA
f=1KHz, R
G
=2KΩ
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000MHz
2
1
1.2
1.2
-600
Min.
110
-90
-250
-700
-900
-660
150
6
10
4
4
2
-750
-800
Typ.
Max.
-15
800
-300
-650
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
Units
nA
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC556/557/558/559/560
Typical Characteristics
-50
-45
1000
I
B
= -400
µ
A
I
B
= -350
µ
A
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
-0
-2
-4
-6
-8
-10
h
FE
, DC CURRENT GAIN
I
B
= -300
µ
A
I
B
= -250
µ
A
I
B
= -200
µ
A
I
B
= -150
µ
A
I
B
= -100
µ
A
I
B
= -50
µ
A
100
10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
I
C
= -10 I
B
V
CE
= -5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
C
ob
(pF), CAPACITANCE
10
f=1MHz
I
E
= 0
V
CE
= -5V
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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