FXT753STZ datasheet, PDF - EEWORLD Datasheet

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FXT753STZ: DescriptionBipolar small signal -; Categorysemiconductor Discrete semiconductor; File Size41KB，1 Pages; ManufacturerAll Sensors

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FXT753STZ Overview

Bipolar small signal -

FXT753STZ Parametric

Parameter Name	Attribute value
Maker	All Sensors
RoHS	no
Configuration	Single
Transistor polarity	PNP
Installation style	Through Hole
Package/box	TO-92
Collector-emitter maximum voltage VCEO	100 V
Emitter-Base voltage VEBO	5 V
Maximum DC collector current	2 A
Power dissipation	1000 mW
Maximum operating frequency	140 MHz (Typ)
Maximum operating temperature	+ 200 C
Minimum operating temperature	- 55 C

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 FEB 94

FEATURES

* 100 Volt V

CEO

* 2 Amp continuous current

* P

tot

= 1 Watt

APPLICATIONS

* Lamp, relay or solenoid drivers

* Audio circuits

* Replacement of TO126 and TO220 devices

REFER TO ZTX753 FOR GRAPHS

FXT753

B

C

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

-120

-100

-5

-6

-2

1

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

Static Forward Current

Transfer Ratio

Transition

Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

70

100

55

25

100

-0.17

-0.30

-0.90

-0.8

200

170

55

140

30

3-58

MIN.

-120

-100

-5

-0.1

-10

-0.1

-0.3

-0.5

-1.25

-1.0

300

MHz

pF

TYP.

MAX.

UNIT

V

µ

A

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-100V, I

E

=0

V

CB

=-100V,

T

amb

=100°C

V

EB

=-4V, I

C

=0

I

C

=-1A, I

B

=-100mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-1A, I

B

=-100mA*

IC=-1A, V

CE

=-2V*

I

C

=-50mA, V

CE

=-2V*

I

C

=-500mA, V

CE

=-2V*

I

C

=-1A, V

CE

=-2V*

I

C

=-2A, V

CE

=-2V*

I

C

=-100mA, V

CE

=-5V

f=100MHz

V

CB

=-10V, f=1MHz

V

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

FXT753STZ Related Products

	FXT753STZ	FXT753STOB	FXT753
Description	Bipolar small signal -	Bipolar small signal -	Bipolar small signal -
Maker	All Sensors	All Sensors	All Sensors
RoHS	no	no	no
Configuration	Single	Single	Single
Transistor polarity	PNP	PNP	PNP
Installation style	Through Hole	Through Hole	Through Hole
Package/box	TO-92	TO-92	TO-92
Collector-emitter maximum voltage VCEO	100 V	100 V	100 V
Emitter-Base voltage VEBO	5 V	5 V	5 V
Maximum DC collector current	2 A	2 A	2 A
Power dissipation	1000 mW	1000 mW	1000 mW
Maximum operating frequency	140 MHz (Typ)	140 MHz (Typ)	140 MHz (Typ)
Maximum operating temperature	+ 200 C	+ 200 C	+ 200 C
Minimum operating temperature	- 55 C	- 55 C	- 55 C

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