Power Field-Effect Transistor, 4.3A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | International Rectifier ( Infineon ) |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (ID) | 4.3 A |
Maximum drain-source on-resistance | 0.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | 260 |
Polarity/channel type | P-CHANNEL |
Maximum power consumption environment | 40 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | MATTE TIN OVER NICKEL |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 40 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |