K8S1215ETC-FE1DT datasheet, PDF

K8S1215ETC-FE1DT: DescriptionEEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,; Categorystorage storage; File Size667KB，83 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K8S1215ETC-FE1DT Overview

EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1124627769
package instruction	FBGA, BGA64,10X14,20
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	95 ns
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B64
memory density	536870912 bit
Memory IC Type	EEPROM CARD
memory width	16
Humidity sensitivity level	1
Number of departments/size	4,511
Number of terminals	64
word count	33554432 words
character code	32000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA64,10X14,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
power supply	1.8 V
Programming voltage	2.7 V
Certification status	Not Qualified
ready/busy	YES
Department size	16K,64K
Maximum standby current	0.00003 A
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE

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