K8F1315EBM-FE1F datasheet, PDF

K8F1315EBM-FE1F: DescriptionFlash, 32MX16, 110ns, PBGA64; Categorystorage storage; File Size1MB，68 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K8F1315EBM-FE1F Overview

Flash, 32MX16, 110ns, PBGA64

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	107508641
package instruction	FBGA, BGA64,10X14,20
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	110 ns
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B64
memory density	536870912 bit
Memory IC Type	FLASH
memory width	16
Number of departments/size	4,511
Number of terminals	64
word count	33554432 words
character code	32000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA64,10X14,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
power supply	1.8 V
Certification status	Not Qualified
ready/busy	YES
Department size	16K,64K
Maximum standby current	0.00002 A
Maximum slew rate	0.055 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
switch bit	YES
type	NOR TYPE

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