IRGS6B60KTRL datasheet, PDF - EEWORLD Datasheet

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IRGS6B60KTRL: DescriptionInsulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size249KB，14 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGS6B60KTRL Overview

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3

IRGS6B60KTRL Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
Shell connection	COLLECTOR
Maximum collector current (IC)	13 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Maximum landing time (tf)	27 ns
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	90 W
Certification status	Not Qualified
Maximum rise time (tr)	26 ns
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	258 ns
Nominal on time (ton)	45 ns
Base Number Matches	1

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PD - 94575A

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

IRGB6B60K

IRGS6B60K

IRGSL6B60K

CES

= 600V

= 7.0A, T

=100°C

> 10µs, T

=150°C

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

n-channel

CE(on)

typ. = 1.8V

TO-220AB

IRGB6B60K

Pak

IRGS6B60K

TO-262

IRGSL6B60K

Absolute Maximum Ratings

Parameter

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Max.

600

7.0

± 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

°C

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case - IGBT

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

Min.

–––

Typ.

–––

0.50

–––

1.44

Max.

1.4

–––

Units

°C/W

www.irf.com

8/18/04

IRGS6B60KTRL Related Products

	IRGS6B60KTRL	IRGS6B60KTRR	IRGS6B60KTRRPBF
Description	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3
Is it lead-free?	Contains lead	Contains lead	Lead free
Is it Rohs certified?	incompatible	incompatible	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	D2PAK	D2PAK	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	13 A	13 A	13 A
Collector-emitter maximum voltage	600 V	600 V	600 V
Configuration	SINGLE	SINGLE	SINGLE
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	30
transistor applications	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	SILICON	SILICON
Nominal off time (toff)	258 ns	258 ns	258 ns
Nominal on time (ton)	45 ns	45 ns	45 ns
Base Number Matches	1	1	1
Maximum landing time (tf)	27 ns	27 ns	-
Gate emitter threshold voltage maximum	5.5 V	5.5 V	-
Gate-emitter maximum voltage	20 V	20 V	-
Maximum power dissipation(Abs)	90 W	90 W	-
Maximum rise time (tr)	26 ns	26 ns	-

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