DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, LFBGA-165
Parameter Name | Attribute value |
Objectid | 8087744350 |
package instruction | LBGA, |
Reach Compliance Code | unknown |
Country Of Origin | Mainland China, Taiwan |
ECCN code | 3A991.B.2.A |
YTEOL | 7.4 |
Maximum access time | 0.45 ns |
JESD-30 code | R-PBGA-B165 |
length | 17 mm |
memory density | 37748736 bit |
Memory IC Type | DDR SRAM |
memory width | 18 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 2097152 words |
character code | 2000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 2MX18 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Maximum seat height | 1.4 mm |
Maximum supply voltage (Vsup) | 1.89 V |
Minimum supply voltage (Vsup) | 1.71 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
width | 15 mm |