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IS61DDP2B22M18C2-400M3I

Description
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, LFBGA-165
Categorystorage    storage   
File Size853KB,32 Pages
ManufacturerISSI(Integrated Silicon Solution Inc.)
Websitehttp://www.issi.com/
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IS61DDP2B22M18C2-400M3I Overview

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, LFBGA-165

IS61DDP2B22M18C2-400M3I Parametric

Parameter NameAttribute value
Objectid8087744350
package instructionLBGA,
Reach Compliance Codeunknown
Country Of OriginMainland China, Taiwan
ECCN code3A991.B.2.A
YTEOL7.4
Maximum access time0.45 ns
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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