Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel
Parameter Name | Attribute value |
Objectid | 1407963346 |
package instruction | FLANGE MOUNT, R-PUFM-X4 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Maximum collector current (IC) | 400 A |
Collector-emitter maximum voltage | 1200 V |
Configuration | SINGLE WITH BUILT-IN DIODE |
Gate emitter threshold voltage maximum | 6.5 V |
Gate-emitter maximum voltage | 20 V |
JESD-30 code | R-PUFM-X4 |
Number of components | 1 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 2500 W |
Maximum power dissipation(Abs) | 2500 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
transistor applications | MOTOR CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 1650 ns |
Nominal on time (ton) | 280 ns |
VCEsat-Max | 4 V |