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SKM400GA122D

Description
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size588KB,8 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
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SKM400GA122D Overview

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel

SKM400GA122D Parametric

Parameter NameAttribute value
Objectid1407963346
package instructionFLANGE MOUNT, R-PUFM-X4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)400 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2500 W
Maximum power dissipation(Abs)2500 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1650 ns
Nominal on time (ton)280 ns
VCEsat-Max4 V

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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