Q67000-S284 datasheet, PDF - EEWORLD Datasheet

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Q67000-S284: Description0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size158KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q67000-S284 Overview

0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET

Q67000-S284 Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	600 V
Processing package description	SOT-223, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	1.8 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	0.1200 A
Maximum drain on-resistance	45 ohm
Maximum leakage current pulse	0.4800 A

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BSP 125

SIPMOS

Small-Signal Transistor

• N channel

• Enhancement mode

•

GS(th)

= 1.5 ...2.5 V

Pin 1

Type

BSP 125

Type

BSP 125

Pin 2

Pin 3

Pin 4

600 V

0.12 A

DS(on)

Ω

Package

SOT-223

Marking

BSP 125

Ordering Code

Q62702-S654

Q67000-S284

Tape and Reel Information

E6327

E6433

Maximum Ratings

Parameter

Drain source voltage

Drain-gate voltage

Symbol

Values

600

Unit

DGR

= 20 kΩ

Gate source voltage

Gate-source peak voltage,aperiodic

Continuous drain current

0.12

= 39 °C

DC drain current, pulsed

Dpuls

0.48

= 25 °C

Power dissipation

tot

1.7

= 25 °C

Semiconductor Group

Sep-12-1996

Q67000-S284 Related Products

	Q67000-S284	BSP125	Q62702-S654
Description	0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET	0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET	0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4	4
surface mount	Yes	YES	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
Transistor component materials	silicon	SILICON	silicon
Minimum breakdown voltage	600 V	-	600 V
Processing package description	SOT-223, 4 PIN	-	SOT-223, 4 PIN
Lead-free	Yes	-	Yes
EU RoHS regulations	Yes	-	Yes
state	ACTIVE	-	ACTIVE
packaging shape	Rectangle	-	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE
terminal coating	NOT SPECIFIED	-	NOT SPECIFIED
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	-	Single WITH BUILT-IN diode
transistor applications	switch	-	switch
Maximum ambient power consumption	1.8 W	-	1.8 W
Channel type	N channel	-	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	-	ENHANCEMENT
Transistor type	universal power supply	-	universal power supply
Maximum leakage current	0.1200 A	-	0.1200 A
Maximum drain on-resistance	45 ohm	-	45 ohm
Maximum leakage current pulse	0.4800 A	-	0.4800 A

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