Q67000-S301 datasheet, PDF - EEWORLD Datasheet

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Q67000-S301: Description1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size151KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q67000-S301 Overview

1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET

Q67000-S301 Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	100 V
Processing package description	ROHS COMPLIANT, SOT-223, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	DRAIN
Number of components	1
Transistor component materials	silicon
Maximum ambient power consumption	1.8 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	1.7 A
Rated avalanche energy	45 mJ
Maximum drain on-resistance	0.3000 ohm
Maximum leakage current pulse	6.8 A

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BSP 373

SIPMOS

Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

•

GS(th)

= 2.1 ... 4.0 V

Pin 1

Pin 2

Pin 3

Pin 4

Type

BSP 373

Type

BSP 373

100 V

1.7 A

DS(on)

0.3

Ω

Package

SOT-223

Marking

BSP 373

Ordering Code

Q67000-S301

Tape and Reel Information

E6327

Maximum Ratings

Parameter

Continuous drain current

Symbol

Values

1.7

Unit

Dpuls

6.8

= 28 °C

DC drain current, pulsed

= 25 °C

Avalanche energy, single pulse

= 1.7 A,

= 25 V,

= 25

Ω

= 23.3 mH,

= 25 °C

Gate source voltage

Power dissipation

tot

1.8

= 25 °C

Semiconductor Group

Sep-12-1996

Q67000-S301 Related Products

	Q67000-S301	BSP373
Description	1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET	1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals	4	4
surface mount	Yes	YES
Terminal form	GULL WING	GULL WING
Terminal location	pair	DUAL
Shell connection	DRAIN	DRAIN
Number of components	1	1
Transistor component materials	silicon	SILICON

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