There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 6.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Forward Bias Safe Operating Area
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 6. Thermal Response
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3
MJD5731
TURN-ON PULSE
t
1
V
BE(off)
V
in
AP
PROX.
-11 V
t
2
t
3
51
C
jd
<< C
eb
0V
V
CC
t
1
≤
7.0 ns
100
≤
t
2
< 500
ms
t
3
< 15 ns
R
C
SCOPE
R
B
V
in
APPROX. + 9.0 V
DUTY CYCLE
≈
2.0%
+ 4.0 V
TURN-OFF PULSE
Figure 7. Switching Time Equivalent Circuit
1.0
0.5
0.3
t, TIME (
μ
s)
0.2
0.1
0.05
0.03
0.02
0.01
0.02 0.03
t
d
t
r
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5.0
t, TIME (
μ
s)
5.0
3.0
2.0
t
f
1.0
0.5
0.3
0.2
0.1
0.05
0.02 0.03
t
s
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5.0
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
Figure 8. Turn−On Resistive Switching Times
Figure 9. Resistive Turn−Off Switching Times
Test Circuit
V
CE
MONITOR
MJE171
50
INPUT
50
+
V
BB1
= 10 V
-
R
BB2
=
100
W
R
BB1
=
150
W
TUT
+
-
V
BB2
=
0
R
S
=
0.1
W
INPUT
VOLTAGE
100 mH
V
CC
= 20 V
I
C
MONITOR
Voltage and Current Waveforms
t
w
≈
3 ms
(SEE NOTE 1)
0V
-5 V
100 ms
0.63 A
COLLECTOR
CURRENT 0 V
V
CER
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Figure 10. Inductive Load Switching
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4
MJD5731
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
4
C
A
B
c2
L3
1
D
2
3
DETAIL A
Z
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
b
0.005 (0.13)
M
c
C
L2
GAUGE
PLANE
H
C
L
L1
DETAIL A
ROTATED 90 CW
5
SEATING
PLANE
A1
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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