GaAs-IR-Lumineszenzdiode (Mini Sidelooker)
GaAs Infrared Emitter (Mini Sidelooker)
SFH 4110
Wesentliche Merkmale
Wellenlänge der Strahlung 950 nm
Enger Abstrahlwinkel
Hohe Strahlstärke
Geringe Außenabmessungen
Gehäusegleich mit Fototransistor SFH 3100 F
Hoher Koppelfaktor in Lichtschranken in
Verbindung mit SFH 3100 F
• Hohe Zuverlässigkeit
Anwendungen
•
•
•
•
•
•
•
Sender für Lichtschranken
Bandende Erkennung (z.B. Videorecorder)
Datenübertragung
Positionsüberwachung
Barcode-Leser
„Messen/Steuern/Regeln“
Münzzähler
Bestellnummer
Ordering Code
Q62702-P5072
•
•
•
•
•
•
Features
Peak wavelength of 950 nm
Narrow half angle
High radiant intensity
Small outline dimensions
Same package as phototransistor SFH 3100 F
High coupling factor in light barriers with
SFH 3100 F
• High reliability
Applications
•
•
•
•
•
•
•
Emitter in photointerrupter
Tape end detection (VCR e.g.)
Data transmission
Position sensing
Barcode reader
For control and drive circuits
Coin counters
•
•
•
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•
Typ
Type
SFH 4110
Gehäuse
Package
Klares Miniatur-Kunststoffgehäuse, seitliche Abstrahlung,
Anschlüsse im 2,54-mm Raster,
Kathodenkennzeichnung: kurzer Anschluß
Clear miniature plastic package, sidelooker, solder tabs
2.54-mm (
1
/
10
”), cathode marking: short lead
2001-02-22
1
SFH 4110
Grenzwerte
(
T
A
= 25
°C)
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Durchlaßstrom
Forward current
Stoßstrom,
t
p
=
10
µs,
D
= 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand Sperrschicht - Umgebung
Thermal resistance junction - ambient
Kennwerte
(
T
A
= 25
°C)
Characteristics
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
Abstrahlwinkel
Half angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
Schaltzeiten,
I
e
von 10% auf 90% und von 90%
auf 10%, bei
I
F
= 20 mA,
R
L
= 50
Ω
Switching times,
Ι
e
from 10% to 90% and from
90% to 10%,
I
F
= 20 mA,
R
L
= 50
Ω
Kapazität,
Capacitance
V
R
= 0 V,
f
= 1 MHz
Symbol
Symbol
λ
peak
∆λ
ϕ
Wert
Value
950
55
±
9
0.0625
0.25
×
0.25
450/360
Einheit
Unit
nm
nm
Grad
deg.
mm
2
mm
ns
Symbol
Symbol
Wert
Value
– 40
…
+ 85
3
60
1
100
280
Einheit
Unit
°C
V
mA
A
mW
K/W
T
op
;
T
stg
V
R
I
F
(DC)
I
FSM
P
tot
R
thJA
A
L
×
B
L
×
W
t
r
,
t
f
C
o
16
pF
2001-02-22
2
SFH 4110
Kennwerte
(
T
A
= 25
°C)
Characteristics
(cont’d)
Bezeichnung
Parameter
Durchlaßspannung,
Forward voltage
I
F
= 20 mA,
t
p
= 20 ms
Sperrstrom,
Reverse current
V
R
= 3 V
Gesamtstrahlungsfluß,
Total radiant flux
I
F
= 20 mA,
t
p
= 20 ms
Temperaturkoeffizient von
I
e
bzw.
Φ
e
,
I
F
= 20 mA
Temperature coefficient of
I
e
or
Φ
e
,
I
F
= 20 mA
Temperaturkoeffizient von
V
F
,
I
F
= 20 mA
Temperature coefficient of
V
F
,
I
F
= 20 mA
Temperaturkoeffizient von
λ,
I
F
= 20 mA
Temperature coefficient of
λ,
I
F
= 20 mA
Symbol
Symbol
Wert
Value
1.2 (≤ 1.4)
Einheit
Unit
V
V
F
I
R
0.01 (≤ 1.0)
µA
Φ
e
2
mW
TC
I
– 0.55
%/K
TC
V
TC
λ
– 1.8
+ 0.3
mV/K
nm/K
Strahlstärke
I
e
in Achsrichtung
gemessen bei einem Raumwinkel
Ω
= 0.01 sr
Radiant Intensity
I
e
in Axial Direction
at a solid angle of
Ω
= 0.01 sr
Bezeichnung
Parameter
Strahlstärke
1)
Radiant intensity
1)
I
F
= 20 mA,
t
p
= 20 ms
1)
1)
Symbol
I
e min
Werte
Values
2.5
Einheit
Unit
mW/sr
Sonderselektion auf Anfrage.
Special bin selection on request.
2001-02-22
3
SFH 4110
Relative Spectral Emission
I
rel
=
f
(λ)
100
%
OHR01938
Radiant Intensity
I
e
I
e
100 mA
=
f
(
I
F
)
Single pulse,
t
p
= 20
µs
Ι
e
Ι
e (100 mA)
10
1
OHF00369
Max. Permissible Forward Current
I
F
=
f
(
T
A
)
90
OHF00372
Ι
rel
Ι
F
mA
70
R
thJA
= 280 K/W
60
80
10
0
60
50
10
-1
40
40
30
10
20
-2
20
10
0
880
920
960
1000
nm
λ
1060
10
-3 -1
10
10
0
10
1
10
2
mA 10
3
Ι
F
0
0
20
40
60
80
C
T
A
120
Forward Current
I
F
=
f
(
V
F
), Single pulse,
t
p
= 20
µs
Ι
F
10
4
mA
10
3
OHF00367
Radiation Characteristics
Ι
rel
=
f
(ϕ)
40˚
30˚
20˚
10˚
0˚
1.0
OHF00371
ϕ
50˚
0.8
10
2
60˚
10
1
0.6
70˚
10
0
0.4
80˚
10
-1
0.2
0
90˚
10
-2
0
0.5
1
1.5
2
2.5
3
V
V
F
4
100˚
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
Permissible Pulse Power
,
Duty cycle
D
= parameter,
T
A
= 25
°C
10
1
OHF00373
Ι
F
A
10
0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10
-1
10
-2 -5
10 10
-4
10
-3
10
-2
10
-1
10
0
s
t
P
10
2
2001-02-22
4
SFH 4110
Maßzeichnung
Package Outlines
0.5 (0.020) x 45˚
R 0.9 (0.035)
R 0.7 (0.028)
Emitter/
Cathode
2.54 (0.100)
3.1 (0.122)
2.9 (0.114)
16.5 (0.650)
16.0 (0.630)
2.2 (0.087)
2.0 (0.079)
1.42 (0.056)
1.22 (0.048)
0.6 (0.024)
0.4 (0.016)
1.04 (0.041)
1.04 (0.041)
4.1 (0.161)
3.9 (0.154)
0.84 (0.033)
0.84 (0.033)
17.77 (0.700)
17.27 (0.680)
3.0 (0.118)
2.8 (0.110)
0.9 (0.035)
0.7 (0.028)
1.6 (0.063)
1.4 (0.055)
1.3 (0.051)
1.1 (0.043)
0.84 (0.033)
0.64 (0.025)
0.5 (0.020)
0.3 (0.012)
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-22
5
60˚
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