PRELIMINARY DATA SHEET
NEC's HIGH NOISE REDUCTION
25 Mbps CMOS OUTPUT TYPE
8-PIN DIP OPTOCOUPLER
DESCRIPTION
PS9661
PS9661L
NEC’s PS9661 and PS9661L are optically coupled isolators containing a GaAlAs LED on the input side and a CMOS
output IC on the output side.
These photocouplers are high common mode transient immunity (CMR), high-speed CMOS output type devices,
making them ideal for high-speed logic interface circuits.
The PS9661 is in a plastic DIP (Dual In-line Package) and the PS9661L is lead bending type (Gull-wing) for surface
mounting.
FEATURES
• High-speed response (25 Mbps)
• High common mode transient immunity (CM
H
, CM
L
=
±20
kV/
µ
s TYP.)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• Pulse width distortion ( | t
PHL
−
t
PLH
| = 3 ns TYP.)
• Ordering number of tape product: PS9661L-E3, E4: 1 000 pcs/reel
APPLICATIONS
• Factory Automation Network
• Measurement equipment
• PDP
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
California Eastern Laboratories
PS9661, PS9661L
ORDERING INFORMATION
Part Number
PS9661
PS9661L
PS9661L-E3
PS9661L-E4
Embossed Tape 1 000 pcs/reel
Package
8-pin DIP
Packing Style
Magazine case 50 pcs
ABSOLUTE MAXIMUM RATINGS (T
A
= 25° C, unless otherwise specified)
°
Parameter
Diode
Detector
Input Voltage
Supply Voltage
Output Voltage
Output Current
Isolation Voltage
*1
Symbol
V
I
V
DD1
,
V
DD2
V
O
I
O
BV
P
T
T
A
T
stg
Ratings
−0.5
to V
DD1
+0.5
0 to 5.5
−0.5
to V
DD2
+0.5
10
3 750
150
−40
to +85
−40
to +125
Unit
V
V
V
mA
Vr.m.s.
mW
°C
°C
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
*1
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
RECOMMENDED OPERATING CONDITIONS (T
A
= 25° C)
°
Parameter
High Level Input Voltage
Low Level Input Voltage
Supply Voltage
Rise Time
Fall Time
Symbol
V
IH
V
IL
V
DD1
,
V
DD2
t
r
t
f
MIN.
2.0
0
4.5
5.0
TYP.
MAX.
V
DD1
0.8
5.5
100
Unit
V
V
V
ns
Preliminary Data Sheet
PS9661, PS9661L
ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions Unless Otherwise
Specified. Note That V
DD1
= V
DD2
= 5 V.)
Parameter
Diode
Low Level Supply Current
High Level Supply Current
Input Current
Detector
Output Supply Current
Symbol
I
DD1L
I
DD1H
I
I
I
DD2H
I
DD2L
High Level Output Voltage
V
OH
V
I
= 0 V
V
I
= V
DD1
V
I
= 0 V or V
I
= V
DD1
V
I
= V
DD1
V
I
= 0 V
I
O
=
−20
µ
A, V
I
= V
IH
I
O
=
−4
mA, V
I
= V
IH
Low Level Output Voltage
V
OL
I
O
= 20
µ
A, V
I
= V
IL
I
O
= 4 mA, V
I
= V
IL
Coupled
Isolation Resistance
Isolation Capacitance
Propagation Delay Time
(H
→
L)
Propagation Delay Time
(L
→
H)
Pulse Width
Pulse Width Distortion
(PWD)
Propagation Delay Skew
Rise Time
Fall Time
Common Mode
Transient Immunity at
High Level Output
Common Mode
Transient Immunity at
Low Level Output
CM
L
t
PSK
t
r
t
f
CM
H
V
I
= V
DD1
= V
DD2
= 5V,
V
O
>
0.8 V
DD1
, V
CM
= 1 kV, T
A
= 25°C
V
I
= V
DD1
= V
DD2
= 5V, V
I
=0V
V
O
<
0.8 V
DD1
, V
CM
= 1 kV
10
20
kV/
µ
s
10
9
8
20
10
20
PW
|
t
PHL-
t
PLH
|
40
3
8
ns
t
PLH
23
40
R
I-O
C
I-O
t
PHL
V
I-O
= 1 kV
DC
, RH = 40 to 60%,
T
A
= 25°C
V = 0 V, f = 1 MHz, T
A
= 25°C
C
L
= 15 pF, CMOS Signal Levels
10
11
Conditions
MIN.
TYP.
7.5
*1
MAX.
10.0
3.0
10
Unit
mA
Fig.
1
2
3, 4
5
6
7
0.15
−10
7
5
4.4
4.0
5.0
4.8
0.01
0.32
µ
A
mA
9
9
0.1
1.0
V
8
Ω
1.3
20
40
pF
9
*1
Typical values at T
A
= 25°C
Preliminary Data Sheet
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