BSP125L6327 datasheet, PDF - EEWORLD Datasheet

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BSP125L6327: DescriptionPower Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size132KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSP125L6327 Overview

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP125L6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	GREEN, PLASTIC PACKAGE-4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	0.12 A
Maximum drain current (ID)	0.12 A
Maximum drain-source on-resistance	45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W
Maximum pulsed drain current (IDM)	0.48 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Base Number Matches	1

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Rev. 1.1

BSP125

SIPMOS

Power-Transistor

Feature

•

N-Channel

•

Enhancement mode

•

Logic Level

•

dv/dt rated

Product Summary

DS(on)

600

0.12

PG-SOT-223

Ω

•

Pb-free lead plating; RoHS compliant available

Type

BSP125

Package

P-SOT-223

PG-SOT-223

RoHS compliant Tape and Reel Information

Yes

E6327: 3000 pcs/reel

L6327: 3000 pcs/reel

Marking

BSP125

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

=25°C

=70°C

Value

0.12

0.1

Unit

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

0.48

±20

Class 1

1.8

-55... +150

55/150/56

°C

kV/µs

Reverse diode dv/dt

=0.12A,

=480V, di/dt=200A/µs,

jmax

=175°C

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

Power dissipation

=25°C,

=25

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Page 1

2005-10-27

BSP125L6327 Related Products

	BSP125L6327	BSP125L6433
Description	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	GREEN, PLASTIC PACKAGE-4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (Abs) (ID)	0.12 A	0.12 A
Maximum drain current (ID)	0.12 A	0.12 A
Maximum drain-source on-resistance	45 Ω	45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1.8 W	1.8 W
Maximum pulsed drain current (IDM)	0.48 A	0.48 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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