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K6F1616R6B-EF70T

Description
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
Categorystorage    storage   
File Size131KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K6F1616R6B-EF70T Overview

Standard SRAM, 1MX16, 70ns, CMOS, PBGA48

K6F1616R6B-EF70T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1125528679
package instructionFBGA, BGA48,6X8,30
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
power supply1.8 V
Certification statusNot Qualified
Minimum standby current1 V
Maximum slew rate0.022 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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