V826632M24SCFX-C0 datasheet, PDF

V826632M24SCFX-C0: DescriptionDDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA172; Categorystorage storage; File Size166KB，14 Pages; ManufacturerProMOS Technologies Inc

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V826632M24SCFX-C0 Overview

DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA172

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1125506417
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	2
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N172
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	172
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM172,20
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	2.8 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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