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V826632M24SASG-D4

Description
DDR DRAM Module, 32MX64, 0.65ns, CMOS, PDMA172
Categorystorage    storage   
File Size218KB,15 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V826632M24SASG-D4 Overview

DDR DRAM Module, 32MX64, 0.65ns, CMOS, PDMA172

V826632M24SASG-D4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1125506413
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
YTEOL2
Maximum access time0.65 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PDMA-N172
JESD-609 codee4
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of terminals172
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIMM
Encapsulate equivalent codeDIMM172,20
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply2.6 V
Certification statusNot Qualified
refresh cycle8192
Maximum slew rate3.2 mA
Nominal supply voltage (Vsup)2.6 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
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