RF Power Field Effect Transistor Array
Parameter Name | Attribute value |
Maker | Motorola ( NXP ) |
package instruction | SMALL OUTLINE, R-PDSO-G16 |
Contacts | 16 |
Manufacturer packaging code | CASE 978-03 |
Reach Compliance Code | unknow |
Shell connection | SOURCE |
Configuration | COMMON SOURCE, 3 ELEMENTS |
Minimum drain-source breakdown voltage | 65 V |
FET technology | METAL-OXIDE SEMICONDUCTOR |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JESD-30 code | R-PDSO-G16 |
Number of components | 3 |
Number of terminals | 16 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 12 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |