NP-SE Series
Product Preview
140A, TSPD
The NP−SE series of Thyristor Surge Protection Devices (TSPD)
protect sensitive electronic equipment from transient overvoltage
conditions. They offer the designer a more robust alternative to the
standard 100 A rated devices.
The NP−SE Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
Features
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BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
140A, 10x1000ms SURGE
T
R
•
Low Leakage (Transparent)
•
High Surge Current Capabilities
•
These are Pb−Free Devices
Typical Applications
•
xDSL Central Office and Customer Premise
•
T1/E1
•
Other Broadband High Speed Data Transmission Equipment
ELECTRICAL CHARACTERISTICS
V
DRM
Device
NP0640SET3G
NP0720SET3G
NP0900SET3G
NP1100SET3G
NP1300SET3G
NP1500SET3G
NP1800SET3G
NP2100SET3G
NP2300SET3G
NP2600SET3G
NP3100SET3G
NP3500SET3G
V
"58
"65
"75
"90
"120
"140
"170
"180
"190
"220
"275
"320
V
(BO)
V
"77
"88
"98
"130
"160
"180
"220
"240
"260
"300
"375
"400
C
O
, 2 V,
1 MHz
pF (Max)
45
45
45
45
45
45
45
45
45
45
45
45
C
O
, 50 V,
1 MHz
pF (Max)
20
20
20
20
20
20
20
20
20
20
20
20
A
Y
WW
xxx
SMB
JEDEC DO−214AA
CASE 403C
MARKING DIAGRAM
AYWW
xxxEMG
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SE)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NPxxx0SET3G
Package
SMB
(Pb−Free)
Shipping
†
2500 Tape &
Reel
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection
−
Values the same in both negative and positive
excursions. (See V−I Curve on page 3)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SURGE RATINGS
I
PPS
(A)
Waveform (ms)
Value
2x10
700
8x20
560
10x160
280
10x560
170
10x360
200
10x1000
140
5x310
280
I
TSM
(A)
0.1 s, 60 Hz
30
di/dt
A/ms
500
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
©
Semiconductor Components Industries, LLC, 2009
January, 2009
−
Rev. P0
1
Publication Order Number:
NP0640SE/D
NP−SE Series
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Symbol
V
DRM
Rating
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
NP0640SET3G
NP0720SET3G
NP0900SET3G
NP1100SET3G
NP1300SET3G
NP1500SET3G
NP1800SET3G
NP2100SET3G
NP2300SET3G
NP2600SET3G
NP3100SET3G
NP3500SET3G
I
PPS
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
2x10
ms,
GR−1089−CORE
8x20
ms,
IEC−61000−4−5
10x160
ms,
TIA−968−A
10x560
ms,
TIA−968−A
10x360
ms,
GR−1089−CORE
10x1000
ms,
GR−1089−CORE
5x310
ms,
ITU−K.20/K.21/K.45
I
TSM
Nonrepetitive peak on−state current: Rated
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a
specified time or number of ac cycles.
0.1s, 50/60 Hz, full sine wave
Value
$58
$65
$75
$90
$120
$140
$170
$180
$190
$220
$275
$320
700
560
280
170
200
140
280
30
A
A
Unit
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS TABLE
(T
A
= 25°C unless otherwise noted)
Symbol
V
(BO)
Rating
Breakover voltage: The maximum voltage across the device in or at the
breakdown region.
VDC = 1000 V, dv/dt = 100 V/ms
NP0640SET3G
NP0720SET3G
NP0900SET3G
NP1100SET3G
NP1300SET3G
NP1500SET3G
NP1800SET3G
NP2100SET3G
NP2300SET3G
NP2600SET3G
NP3100SET3G
NP3500SET3G
I
(BO)
I
H
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: The minimum current required to maintain the device in the on−state.
150
Min
Typ
Max
$77
$88
$98
$130
$160
$180
$220
$240
$260
$300
$350
$400
800
mA
mA
Unit
V
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2
NP−SE Series
ELECTRICAL CHARACTERISTICS TABLE
(T
A
= 25°C unless otherwise noted)
Symbol
I
DRM
V
T
dv/dt
Rating
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
V
D
= 50 V
V
D
= V
DRM
Min
Typ
Max
2
5
4
±5
V
kV/ms
Unit
mA
On−state Voltage: The voltage across the device in the on−state condition.
I
T
= 2.2 A (pk), PW = 300
ms,
DC = 2%
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below V
DRM
) that
will not cause switching from the off−state to the on−state.
Linear Ramp between 0.1 V
DRM
and 0.9 V
DRM
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
Off−state Capacitance
f = 1.0 MHz, V
d
= 1.0 V
RMS
, V
D
=
−2
Vdc
NP0640SET3G
NP0720SET3G
NP0900SET3G
NP1100SET3G
NP1300SET3G
NP1500SET3G
NP1800SET3G
NP2100SET3G
NP2300SET3G
NP2600SET3G
NP3100SET3G
NP3500SET3G
di/dt
C
O
±500
45
45
45
45
45
45
45
45
45
45
45
45
A/ms
pF
THERMAL CHARACTERISTICS
Symbol
T
STG
T
J
R
0JA
Storage Temperature Range
Junction Temperature
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
+I
I
PPS
I
TSM
I
T
I
H
−Voltage
I
(BO)
I
DRM
On−State Region
Rating
Value
−65
to +150
−40
to +150
90
Unit
°C
°C
°C/W
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol
V
DRM
V
(BO)
I
DRM
I
(BO)
I
H
V
T
I
T
I
TSM
I
PPS
V
D
I
D
Parameter
Repetitive Peak Off−state Voltage
Breakover Voltage
Off−state Current
Breakover Current
Holding Current
On−state Voltage
On−state Current
Nonrepetitive Peak On−state Current
Nonrepetitive Peak Impulse Current
Off−state Voltage
Off−state Current
V
T
Off−State Region
I
D
+Voltage
V
D
V
(BO)
V
DRM
−I
Figure 1. Voltage Current Characteristics of TSPD
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3
NP−SE Series
Ipp
−
PEAK PULSE CURRENT
−
%Ipp
100
PEAK ON−STATE CURRENT
100
Peak
Value
t
r
= rise time to peak value
t
f
= decay time to half value
10
50
Half Value
1
0.1
0
1
Figure 2. Nonrepetitive On−State Current vs. Time
(I
TSM
)
Detailed Operating Description
10
100
CURRENT DURATION (s)
1000
0 t
r
t
f
TIME (ms)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (I
PPS
)
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
and shorts the transient to ground, safely protecting the
circuit.
+
I
(OP)
+
Protected
Equipment
−
•TSPD
looks like an open
•Circuit
operates normally
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the I
DRM
. The I
DRM
should be as low as
possible. The typical value is less than 5
mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V
(BO)
is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The V
DRM
is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V
(BO)
is typically a 20−30% higher than the V
DRM
. Based
on these characteristics it is critical to choose devices which
have a V
DRM
higher than the normal circuit operating
voltage, and a V
(BO)
which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
V
t
allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
V
(OP)
TSPD
−
Normal Circuit Operation
+
−
I
(Fault)
V
(Fault)
TSPD
+
I
(Fault)
Protected
Equipment
−
Operation during a Fault
•Fault
voltage greater than V
bo
occurs
•TSPD
shorts fault to ground
•After
short duration events the O/V
switches back to an open condition
•Worst
case (Fail/Safe)
•O/V
permanent short
•Equipment
protected
Figure 4. Normal and Fault Conditions
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4
NP−SE Series
Transient Surge
Example:
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
Equipment Failure Threshold
TSPD Protection Voltage
Upper Limit
Normal System
Operating Voltage
TSPD Transparent
(open)
TSPD Protection
(short)
TSPD Transparent
(open)
Volts
V
DRM
should be greater than the peak value of these two
components:
V
DRM
> 212 + 48 = 260 V
DRM
Breakover Voltage V
(BO)
Time
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Figure 5. Protection During a Transient Surge
Peak Pulse Current Ipps
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (I
H
)
When selecting a TSPD use the following key selection
parameters.
Off−State Voltage V
DRM
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
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