NN51V4265ALJ-50 datasheet, PDF

NN51V4265ALJ-50: DescriptionEDO DRAM, 256KX16, 50ns, CMOS, PDSO40; Categorystorage storage; File Size1MB，30 Pages; ManufacturerUnited Microelectronics Corporation; Websitehttp://www.umc.com/

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NN51V4265ALJ-50 Overview

EDO DRAM, 256KX16, 50ns, CMOS, PDSO40

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	101037287
package instruction	SOJ, SOJ40,.44
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	50 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J40
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	EDO DRAM
memory width	16
Number of terminals	40
word count	262144 words
character code	256000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ40,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	512
self refresh	YES
Maximum standby current	0.0001 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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