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MS2602

Description
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, M218, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MS2602 Overview

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, M218, 2 PIN

MS2602 Parametric

Parameter NameAttribute value
Objectid1454485827
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionBASE
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MS2602
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATION
Features
2.7 – 3.1 GHz
30 VOLTS
P
OUT
= 3.0 WATTS
G
P
= 5.7 dB MINIMUM
GOLD METALIZATION
INPUT/OUTPUT MATCHING
COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2602 is a silicon NPN bipolar transistor designed
for pulsed S-Band radar applications.
The MS2602 is capable of operation over a wide range of
pulse widths and duty cycles. Internal impedance
matching and gold metalization provide consistent
broadband performance and long term reliability.
ABSOLUTE
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C)
°
Symbol
V
CC
P
DISS
I
C
T
J
T
STG
Parameter
Value
34
23
0.9
200
-65 to +200
Unit
V
W
A
º
C
º
C
Collector – Supply Voltage
Power Dissipation
Device Current*
Junction Temperature
Storage Temperature
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
6.5
°
C/W
12-05-2002
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