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IM6508-1MDE/B

Description
Standard SRAM, 1KX1, 180ns, CMOS, CDIP16
Categorystorage    storage   
File Size381KB,6 Pages
ManufacturerGeneral Electric Solid State
Download Datasheet Parametric View All

IM6508-1MDE/B Overview

Standard SRAM, 1KX1, 180ns, CMOS, CDIP16

IM6508-1MDE/B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101267560
package instructionDIP, DIP16,.3
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time180 ns
JESD-30 codeR-XDIP-T16
JESD-609 codee0
memory density1024 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of terminals16
word count1024 words
character code1000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP16,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0001 A
Minimum standby current2 V
Maximum slew rate0.004 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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