2N3819L datasheet, PDF - EEWORLD Datasheet

2N3819L: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA,; CategoryDiscrete semiconductor The transistor; File Size174KB，5 Pages; ManufacturerAtmel (Microchip)

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2N3819L Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA,

Parameter Name	Attribute value
Objectid	1438637757
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	4 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-226AA
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	11 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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