DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | O-PALF-W2 |
| Contacts | 2 |
| Manufacturer packaging code | 3-3E1A |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.3 V |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 33 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -40 °C |
| Maximum output current | 1 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum reverse recovery time | 0.4 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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