Standard SRAM, 128KX8, 12ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Micross |
Parts packaging code | DIP |
package instruction | DIP, DIP32,.4 |
Contacts | 32 |
Reach Compliance Code | compliant |
ECCN code | 3A991.B.2.B |
Maximum access time | 12 ns |
Other features | TTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY |
I/O type | COMMON |
JESD-30 code | R-CDIP-T32 |
JESD-609 code | e0 |
memory density | 1048576 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 131072 words |
character code | 128000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 128KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP32,.4 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
Maximum seat height | 5.8928 mm |
Maximum standby current | 0.001 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.25 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |