1N249AE3 datasheet, PDF - EEWORLD Datasheet

1N249AE3: DescriptionRectifier Diode, 1 Phase, 1 Element, 40A, 100V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN; CategoryDiscrete semiconductor diode; File Size155KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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1N249AE3 Overview

Rectifier Diode, 1 Phase, 1 Element, 40A, 100V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN

Parameter Name	Attribute value
package instruction	METAL, DO-5, 1 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
application	POWER
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-203AB
JESD-30 code	O-MUPM-D1
Maximum non-repetitive peak forward current	800 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	40 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	5 µs
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Base Number Matches	1

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