1N5186US thru 1N5190US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” rectifier diode series is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically
sealed with voidless-glass construction using an internal “Category I” metallurgical
bond. These devices are also available in military qualified axial-leaded packages
by deleting the “US” suffix. Microsemi also offers numerous other rectifier products
to meet higher and lower current ratings with various recovery time speed
requirements including fast and ultrafast device types in both through-hole and
surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “E”
or D-5B
FEATURES
•
•
•
•
•
•
Surface mount equivalent to the popular JEDEC
registered 1N5186 to 1N5190 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 100 to 600 Volts.
Further options in screening in accordance with MIL-
PRF-19500/424 for JAN, JANTX, and JANTXV by adding
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,
MV1N5187US, etc.
Axial-leaded package equivalents also available (see
separate data sheet for 1N5186 thru 1N5190)
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Fast recovery 3 Amp rectifiers 100 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in
Microsemi MicroNote 050
•
MAXIMUM RATINGS
•
•
•
•
•
•
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 10
o
C/W junction to end cap
Thermal Impedance: 1.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 3.0 Amps @ T
A
=
25ºC and 0.700 Amps at T
A
= 150ºC
Forward Surge Current: 80 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
•
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are solid silver with
Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 539 mg
See package dimensions on last page
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
o
25 C
100 C
µA
µA
o
ELECTRICAL
CHARACTERISTICS
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
100V
200V
400V
500V
600V
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50µA
VOLTS
120V
240V
480V
550V
660V
FORWARD
VOLTAGE
V
F
@ 9A (pulsed)
MIN
MAX
VOLTS
VOLTS
0.9V
1.5V
MAXIMUM
REVERSE
RECOVERY
TIME
t
rr
ns
150
200
250
300
400
AVERAGE
RECTIFIED
CURRENT AMPS
I
O
1N5186 thru 1N5190
TYPE
1N5186US
1N5187US
1N5188US
1N5189US
1N5190US
2.0
100
25 C
AMPS
3.0
3.0
3.0
3.0
3.0
o
150 C
AMPS
0.7
0.7
0.7
0.7
0.7
o
Copyright
2004
12-10-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5186US thru 1N5190US
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
WWW .
Microsemi
.C
OM
PACKAGE DIMENSIONS
NOTE: This Package Outline has also previously
been identified as “D-5B”
INCHES
MIN
BL
BD
ECT
S
.205
.137
.019
.003
MAX
.225
.142
.028
---
MIN
5.21
3.48
0.48
0.08
mm
MAX
5.72
3.61
0.711
---
A
B
C
PAD LAYOUT
INCHES
0.288
0.070
0.155
mm
7.32
1.78
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
1N5186 thru 1N5190
Copyright
2004
12-10-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Programming Basics
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