EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

JAN1N5617US

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size129KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

JAN1N5617US Online Shopping

Suppliers Part Number Price MOQ In stock  
JAN1N5617US - - View Buy Now

JAN1N5617US Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

JAN1N5617US Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
GuidelineMIL-19500/429J
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.15 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号