1MBI300S-120 datasheet, PDF - EEWORLD Datasheet

1MBI300S-120: DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size588KB，5 Pages; ManufacturerFuji Electric Co., Ltd.

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1MBI300S-120 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code	unknown
Is Samacsys	N
Shell connection	ISOLATED
Maximum collector current (IC)	300 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1900 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	1000 ns
Nominal on time (ton)	1200 ns
VCEsat-Max	2.6 V
Base Number Matches	1

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