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MSMBG11AE3/TR

Description
Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size162KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MSMBG11AE3/TR Overview

Trans Voltage Suppressor Diode, 600W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN

MSMBG11AE3/TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-PDSO-G2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Maximum breakdown voltage13.5 V
Minimum breakdown voltage12.2 V
Breakdown voltage nominal value12.85 V
Maximum clamping voltage18.2 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AA
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage11 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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