1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/
o
C for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
•
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.1V +/- 5%
Internal metallurgical bonds
JANS Equivalent available via SCD
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
•
APPLICATIONS / BENEFITS
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available
from 0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
•
•
•
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MAXIMUM RATINGS
•
•
Operating & StorageTemperature: -65
o
C to
+175
o
C
DC Power Dissipation: 250 mW @ T
L
= 25
o
C
NOTE: For optimum voltage-temperature
stability, the test current I
ZT
= 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
Solder temperatures: 260
o
C for 10 s (maximum)
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass case with
DO-7 (DO-204AA) package
TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
1N4765 – 1N4774A
4765 – 1N4774A
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•
•
•
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
*ELECTRICAL CHARACTERISTICS @ 25
o
C
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
(Note 3)
V
Z
@ I
ZT
VOLTS
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
9.1
ZENER
TEST
CURRENT
I
ZT
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
DYNAMIC
IMPEDANCE
Z
ZT
OHMS
350
350
350
350
350
350
350
350
350
350
200
200
200
200
200
200
200
200
200
200
MAXIMUM
REVERSE
CURRENT
I
R
@ 6 V
I
R
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 2 & 3)
∆V
ZT
mV
68
141
34
70
14
28
7
14
3
7
68
141
34
70
14
28
7
14
3
7
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
α
VZ
%/ C
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.005
0.005
o
WWW .
Microsemi
.C
OM
1N4765
1N4765A
1N4766
1N4766A
1N4767
1N4767A
1N4768
1N4768A
1N4769
1N4769A
1N4770
1N4770A
1N4771
1N4771A
1N4772
1N4772A
1N4773
1N4773A
1N4774
1N4774A
C
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0 to + 75
-55 to +100
o
*JEDEC Registered Data.
NOTES:
1.
2.
3.
4.
5.
Measured by superimposing I
Z
ac rms on I
Z
dc @ +25
o
C where I
Z
ac rms = 10% I
Z
dc.
Maximum allowable change between any two discrete temperatures over the specified temperature range.
Voltage measurements to be performed 15 seconds after application of dc current.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
1N4765 – 1N4774A
All dimensions in:
INCH
mm
Copyright
2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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