IS66WVE51216TBLL-70BI datasheet, PDF

IS66WVE51216TBLL-70BI: DescriptionPseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48; Categorystorage storage; File Size645KB，33 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS66WVE51216TBLL-70BI Overview

Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, TFBGA-48

Parameter Name	Attribute value
package instruction	6 X 8 MM, MO-207, TFBGA-48
Reach Compliance Code	unknown
Is Samacsys	N
Maximum access time	70 ns
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	8388608 bit
Memory IC Type	PSEUDO STATIC RAM
memory width	16
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
width	6 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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