N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package
Parameter Name | Attribute value |
Brand Name | STMicroelectronics |
Maker | STMicroelectronics |
Parts packaging code | D2PAK |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 4 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Factory Lead Time | 16 weeks |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (Abs) (ID) | 61 A |
Maximum drain current (ID) | 65 A |
Maximum drain-source on-resistance | 0.02 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 245 |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 190 W |
Maximum pulsed drain current (IDM) | 260 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | Matte Tin (Sn) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |