RFD3055LESM datasheet, PDF - EEWORLD Datasheet

RFD3055LESM: Description11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size86KB，8 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	60 V
Lead-free	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	11 A
Maximum drain on-resistance	0.1070 ohm

	RFD3055LESM	RFP3055LE	RFD3055LE
Description	11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Number of terminals	2	-	3
Minimum breakdown voltage	60 V	-	60 V
Lead-free	Yes	-	Yes
state	ACTIVE	-	ACTIVE
packaging shape	Rectangle	-	Rectangle
Package Size	SMALL OUTLINE	-	IN-line
Terminal form	GULL WING	-	THROUGH-hole
terminal coating	MATTE Tin	-	MATTE Tin
Terminal location	single	-	single
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	-	Single WITH BUILT-IN diode
Shell connection	DRAIN	-	DRAIN
Number of components	1	-	1
transistor applications	switch	-	switch
Transistor component materials	silicon	-	silicon
Channel type	N channel	-	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	-	ENHANCEMENT
Transistor type	universal power supply	-	universal power supply
Maximum leakage current	11 A	-	11 A
Maximum drain on-resistance	0.1070 ohm	-	0.1070 ohm

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