3N250-M datasheet, PDF - EEWORLD Datasheet

3N250-M: DescriptionBridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size59KB，2 Pages; ManufacturerCentral Semiconductor

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3N250-M Overview

Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	R-PSIP-T4
JESD-609 code	e0
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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